The interface thermal conductance (G) at the MoS2/h-BN interface is measured by Raman spectroscopy, and the room-temperature value is (17.0±0.4) MW.m-2K-1. For comparison, G between graphene and h-BN is also measured, with a value of (52.2±2.1) MW.m-2K-1. Non-equilibrium Green’s function (NEGF) calculations, from which the phonon transmission spectrum can be obtained, show that the lower G at the MoS2/h-BN interface is due to the weaker cross-plane transmission of phonon modes compared to graphene/h-BN. This study demonstrates that the MoS2/h-BN interface limits cross-plane heat dissipation, and thereby could impact the design and applications of 2D devices while considering critical thermal management.
